We propose a direct solver to the non-stationary Boltzmann-Poisson system for simulating the electron transport in two-dimensional GaAs devices. The GaAs conduction band is approximated by a two-valley model. All of the important scattering mechanisms are taken into account. Our numerical scheme consists of the combination of the multigroup approach to deal with the dependence of the electron distribution functions on the three-dimensional electron wave vectors and a high-order WENO reconstruction procedure for treating their spatial dependences. The electric field is determined self-consistently from the Poisson equation. Numerical results are presented for a GaAs-MESFET. We display electron distribution functions as well as several macroscopic quantities and compare them to those of Monte Carlo simulations. In addition, we study the influence of the used discretization on the obtained results.
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References in zbMATH (referenced in 3 articles , 1 standard article )
Showing results 1 to 3 of 3.
- Vecil, Francesco; Mantas, José M.; Cáceres, María J.; Sampedro, Carlos; Godoy, Andrés; Gámiz, Francisco: A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo (2014)
- Ben Abdallah, N.; Cáceres, M.J.; Carrillo, J.A.; Vecil, F.: A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs (2009)
- Galler, M.; Schürrer, F.: A direct multigroup-WENO solver for the 2D non-stationary Boltzmann--Poisson system for GaAs devices: GaAs-MESFET (2006)