WIAS-TeSCA (Two- and three-dimensional semiconductor analysis package) is a program system for the numerical simulation of charge transfer processes in semiconductor structures, especially also in semiconductor lasers. It is based on the drift-diffusion model and considers a multitude of additional physical effects, like optical radiation, temperature influences and the kinetics of deep (trapped) impurities. Its efficiency is based on the analytic study of the strongly nonlinear system of partial differential equations (van Roosbroeck), which describes the electron and hole currents. Very efficient numerical procedures for both the stationary and transient simulation have been implemented in WIAS-TeSCA.
Keywords for this software
References in zbMATH (referenced in 4 articles )
Showing results 1 to 4 of 4.
- Kaiser, Hans-Christoph; Neidhard, Hagen; Rehberg, Joachim: Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case (2009)
- Murawski, J.; Schwarz, G.; Novák, V.; Prettl, W.; Schöll, E.: Simulation of longitudinal instabilities in filamentary current flow during low-temperature impurity breakdown in semiconductors (2005)
- Gajewski, H.; Kaiser, H.-Chr.; Langmach, H.; Nürnberg, R.; Richter, R. H.: Mathematical modelling and numerical simulation of semiconductor detectors (2003)
- Hünlich, Rolf; Albinus, Günter; Gajewski, Herbert; Glitzky, Annegret; Röpke, Wilfried; Knopke, Jürgen: Modelling and simulation of power devices for high-voltage integrated circuits (2003)
Further publications can be found at: http://wias-berlin.de/publications/refereed/index.jsp?lang=1